Samatcha Vorathamrong

Dedicated researcher with strong expertise in scientific inquiry, experimental design, and data-driven analysis. Focus on continuous learning and adapting to emerging methodologies. Skilled in statistical analysis, scientific writing, and advanced laboratory techniques. Committed to academic excellence and delivering high-impact results through rigorous research and collaboration.

A master’s thesis (Degree: Master of Engineering / Date obtained 5/2012)

Characteristics of Tantalum Nitride Thin Films on Glass and Polyimide Substrates Deposited by Reactive Sputtering

Supervisor: Assoc.Prof. Dr.Somchai Ratanathamphan

A doctoral thesis (Degree: PhD of Engineering / Date obtained 8/2017)

Growth of self-catalyzed GaAs nanowires by Molecular Beam Epitaxy directly on GaAs (111)B substrates

Supervisor: Assoc.Prof. Dr.Somchai Ratanathamphan

Publication list

• Tuning the emission wavelength by varying the Sb composition in InGaAs/GaAsSb “W” quantum wells grown on GaAs (001) substrates
  Journal of Vacuum Science & Technology A: Vacuum, Surfaces and Films, Vol. 42, Issue 3, Article 032709 (May 1, 2024)
• The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates

      Journal of Applied Physics, Volume 135, Issue 4 (2024)

• Surface evolution of native silicon oxide layer and its effects on the growth of self‑assisted VLS GaAs nanowires
  AIP Advances, Vol. 9, Issue 2, 2019
• Effect of substrate temperature on GaAs nanowires growth directly on Si (111) substrates by molecular beam epitaxy
  Materials Today: Proceedings, Vol. 23, pp. 685–689 (2020)
• Observation of self‑assisted GaAs nanowire growth by molecular beam epitaxy on GaAs (111) B without SiO₂ layer
  Materials Research Express, Vol. 4, Issue 9, 095016 (2017)
• Effect of substrate temperature on self‑assisted GaAs nanowires grown by Molecular Beam Epitaxy on GaAs (111) B substrates without SiO₂ layer
  Journal of Crystal Growth, Vol. 477, pp. 217–220 (2017)
• Comparison of self‑assisted VLS GaAs nanowires grown by MBE on Si (111) and GaAs (111) B substrates
  Journal of Physics: Conference Series, Vol. 864, Issue 1, 012004 (2017)
• Effect of Ga Pre‑Deposition Rate on GaAs Nanowires Grown by Self‑Assisted VLS Method Using MBE on SiO₂/Si(111) Substrates
  Advanced Materials Research, Vol. 1131, pp. 12–15 (2016)
• Effect of SiO₂ Thickness on GaAs Nanowires on Si (111) Substrates Grown by Molecular Beam Epitaxy
  Advanced Materials Research, Vol. 1131, pp. 16–19 (2016)